| 摘要 |
PROBLEM TO BE SOLVED: To prevent erroneous detection and to enable exact overlay accuracy measurement by arranging the measurement patterns of a photomask for formation of a lower layer and the measurement patterns of a photomask for formation of an upper layer formed right above this lower layer in the positions where measurement marks do not overlap on each other. SOLUTION: The line patterns 11, 12 are formed by using the mask in a stage for forming the lower layer. The line patterns 21, 22 are formed on the upper layer by using the mask in a lithography stage of the upper layer forming stage formed on a lower layer. The line patterns 11, 12, 21, 22 respectively consist of plural parallel line patterns. The line patterns of the line patterns 11, 12 and the line patterns of the line patterns 21, 22 are arranged in the directions orthogonal with each other. The wire-shaped patterns 11, 21 are used for measurement of the misalignment in an X direction and the line patterns 12, 22 are used for measurement of the misalignment in a Y direction. In such a case, the patterns of the measurement marks of the ground surface layer and the patterns of the measurement marks of the upper layer are so arranged as not to overlap on each other. |
