发明名称 |
Dimension measurement of a semiconductor device |
摘要 |
A feature (24) of a semiconductor device (10) is formed in a photoresist (14). To accurately measure a dimension (26) of the feature (24), portions of the photoresist (14) are removed to provide a reduced thickness (34) of the photoresist (14). The ratio between the reduced thickness (34) and the dimension (26) allows for more accurate dimension measurement of the feature (24) of the semiconductor device (10).
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申请公布号 |
US5780852(A) |
申请公布日期 |
1998.07.14 |
申请号 |
US19970824856 |
申请日期 |
1997.03.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SHU, JING-SHING |
分类号 |
G01N1/32;(IPC1-7):G01N1/32;G01N23/225 |
主分类号 |
G01N1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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