| 摘要 |
<p>A composite wiring structure (10) for use with at least one semiconductor device (16). The composite wiring structure having a first conductive member (12) upon which the semiconductor device can be mounted for electrical connection thereto. A dielectric member (20), made of ceramic or organo-ceramic composite material, is bonded to the first conductive member (12) and contains embedded therein a conductive network (24) and a thermal distribution network (26). A second conductive member (32) may be incorporated with the composite wiring structure, with a capacitor (64) being electrically connected between the conductive network (24) and the second conductive member (32). Bonding between the dielectric member and the conductive members may be in the form of a direct covalent bond formed at a temperature insufficient to adversely effect the structural integrity of the conductive network and the thermal distribution network.</p> |
