| 摘要 |
<p>An improved well boosting implant (25) which provides better characteristics than traditional halo implants particularly for short channel devices (e.g., 0,25 microns or less). In effect, an implant is distributed across the entire channel with higher concentrations occurring in the center of the channel of the devices having gate lengths less than the critical dimension. This is done by using very large tilt angles (e.g., 30-50°) with a relatively light dopant species and by using a relatively high energy when compared to the traditional halo implants.</p> |
