| 摘要 |
PURPOSE:To reduce the size of a memory cell by forming first and second connection conductors at the place lower than the surfaces of first and second semiconductor regions. CONSTITUTION:The bases and collectors of first and second npn (or pnp) transistors (Tr) Q3 and Q4 are cross-connected with each other, thereby constituting a flip-flop circuit. A first semiconductor layer of a first conductivity type of the first Tr Q3 and a second semiconductor layer of a second conductively type of the second Tr Q4 are connected to each other through a conductor provided under the semiconductor. Similarly, a first semiconductor layer of the first conductivity type of the second Tr Q4 and a second semiconductor layer of the second conductivity type of the first Tr Q3 are connected with each other through the conductor. |
