| 摘要 |
An aluminum nitride substrate (5) where an electroconductive metallized layer (4) is formed on a ceramic substrate (1) comprising a sintered substance of aluminum nitride with a high thermal conductivity for example 200 W/m.K. The sintered substance of aluminum nitride (1) contains a proper amount of a sintering assistance agent component. The density on the surface of an intergranular phase (3) component mainly comprising the sintering assistance agent component is 3 weight % or less. The metallized layer (4) formed on the sintered substance of aluminum nitride defining the density of the intergranular phase component on the surface of the sintered substance has an excellent bonding strength against the sintered substance of aluminum nitride, the bonding strength being nearly stable. |
