发明名称 Diamond wafer and method of producing a diamond wafer
摘要 A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 mu m</= ¦H¦ </= 150 mu m. The film is polished to a roughness of less than Rmax50nm and Ra20nm. <IMAGE>
申请公布号 EP0676485(B1) 申请公布日期 1998.07.08
申请号 EP19950302234 申请日期 1995.04.04
申请人 SUMITOMO ELECTRIC INDUSTRIES, LIMITED 发明人 TANABE, KEIICHIRO;SEKI, YUICHIRO;IKEGAYA, AKIHIKO;FUJIMORI, NAOJI;NAKAHATA, HIDEAKI;SHIKATA, SHIN
分类号 C23C16/27;C30B25/02;H03H3/08;H03H9/02 主分类号 C23C16/27
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