| 摘要 |
The disclosure herein relates to a method for forming ohmic contacts to the backside of solid-state semiconductor devices comprising a sequential deposition and alloying of a multilayered structure comprising, respectively, tin, gold, nickel and gold alloyed to the semiconductor body, which is then mounted on a gold-plated metal base with a gold epoxy preform. Other suitable base and preform materials are also disclosed. |
