A semiconductor device is described having an interconnection pattern comprising a dielectric layer (21) bonded to a metal layer (22) through an intermediate bonding layer (23) formed by reaction of an adhesion promoter with the metal. The dielectric layer comprises a material selected from the group consisting of teflons, parylenes and silesquioxanes. By employing a low resistivity metal, such as copper and a low dielectric constant material a low RC delay interconnection pattern can be formed. <IMAGE>
申请公布号
EP0852067(A1)
申请公布日期
1998.07.08
申请号
EP19960929805
申请日期
1996.09.18
申请人
ADVANCED MICRO DEVICES INC.
发明人
YOU, LU;CHEUNG, ROBIN, W.;CHAN, SIMON, S.;HUANG, RICHARD, J.