A GaAsP epitaxial wafer and a method for manufacturing it
摘要
A GaAsP epitaxial wafer 10 which has a GaAs1-xPx (0.45 < x < 1) constant nitrogen concentration layer 6 formed by doping a constant composition layer with nitrogen wherein the constant nitrogen concentration layer 6 has the following upper and lower limits of nitrogen concentration: <MATH> <MATH> <IMAGE>
