| 发明名称 |
Tasin oxygen diffusion barrier in multilayer structures |
| 摘要 |
A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.
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| 申请公布号 |
US5776823(A) |
申请公布日期 |
1998.07.07 |
| 申请号 |
US19960646583 |
申请日期 |
1996.05.08 |
| 申请人 |
IBM CORPORATION |
发明人 |
AGNELLO, PAUL DAVID;CABRAL, JR., CYRIL;GRILL, ALFRED;JAHNES, CHRISTOPHER VINCENT;LICATA, THOMAS JOHN;ROY, RONNEN ANDREW |
| 分类号 |
H01L21/28;H01L21/46;H01L21/8238;H01L21/8242;H01L21/8246;H01L27/092;H01L27/105;H01L27/108;H01L29/49;H01L29/51;H01L29/78;H01L29/94;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
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