发明名称 Temperature controlled chuck for vacuum processing
摘要 A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).
申请公布号 US5775416(A) 申请公布日期 1998.07.07
申请号 US19950560344 申请日期 1995.11.17
申请人 CVC PRODUCTS, INC. 发明人 HEIMANSON, DORIAN;OMSTEAD, THOMAS R.
分类号 C23C14/50;C23C14/54;C30B23/02;C30B25/10;C30B31/12;H01L21/00;H01L21/687;(IPC1-7):F25B29/00 主分类号 C23C14/50
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