发明名称 |
Method for forming a strong dielectric film by the sol-gel technique and a method for manufacturing a capacitor |
摘要 |
A method for forming a PZT strong dielectric film by the sol-gel technique, in which the thickness of the film is substantially no greater than 1000 ANGSTROM . In another aspect, the drying temperature of the raw material sol-gel solution for forming the PZT dielectric film is maintained within the range of 130 DEG -200 DEG C., and is particularly set lower than the boiling point of the stabilizer contained in the sol-gel raw material and higher than the boiling point of the solvent contained in the sol-gel raw material. As a result of performing the oxidative sintering treatment at a temperature at which perovskite crystals form, it becomes possible to readily form thin films exhibiting a (100) crystal orientation in particular. Additionally, completely crack-free thick films can be formed.
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申请公布号 |
US5776788(A) |
申请公布日期 |
1998.07.07 |
申请号 |
US19960601884 |
申请日期 |
1996.02.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
AOKI, KATSUHIRO;FUKUDA, YUKIO;NISHIMURA, AKITOSHI |
分类号 |
C01B13/32;C04B35/49;C23C18/12;H01B3/00;H01G4/12;H01L21/314;H01L21/316;(IPC1-7):H01L21/70 |
主分类号 |
C01B13/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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