Integrated device with a structure for protection against high electric fields

摘要

An integrated device including a structure for protection against electric fields. The protection structure may include a first region of conducting material electrically connected to the gate/source region of the device at a first potential. The protection structure may also include a second region of conducting material electrically connected to the drain region of the device at a second potential differing from the first. In one embodiment, the first region of conducting material is comb-shaped, and includes a first number of fingers separated by a plurality of gaps. The second region of conducting material includes portions extending at the aforementioned gaps to form a comb structure. Thus, the body of semiconductor material of the device sees a protection region formed by a pair of interlocking comb structures at an intermediate potential between the first and second potentials.