发明名称 Methods of making Cr-Me sputter targets and targets produced thereby
摘要 Methods for making Cr-Me sputter targets wherein Me is a metal are disclosed. Preferably Me is a transition metal and most preferably is a member selected from the group consisting of Cu, Fe, and V. As a first step in the method, Cr and Me powder or crystals on the order of less than 100 mesh are provided. Preferably, the powders or crystals have a size of about 6-8 mesh. The Cr is present in a weight ratio amount of at least 50% Cr based upon the total combined weight of Cr and Me present. The Cr and Me components are then mechanically alloyed in a high energy ball mill or the like so as to provide an intimate mixture of powdered Cr-Me. The resulting powder is screened with, for example, a -20 -70 mesh screen, and then subjected to hot isostatic pressing (HIP) conditions to consolidate the powders at pressures of about 10,000 to 45,000 psi and temperatures of 800 DEG C. to 1500 DEG C. for about +E,fra 1/4+EE to 5 hours. The HIP can is then opened, and the resulting consolidated mass or billet is cut and machined into the desired target size and shape.
申请公布号 US5778302(A) 申请公布日期 1998.07.07
申请号 US19950550256 申请日期 1995.10.30
申请人 TOSOH SMD, INC. 发明人 IVANOV, EUGENE Y.
分类号 B22F1/00;C22C1/04;C23C14/34;(IPC1-7):B22F1/00;B22F3/14 主分类号 B22F1/00
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