| 摘要 |
PROBLEM TO BE SOLVED: To purify t-butylhydrazine to the high-purity one useful for producing a barrier film for a compound semiconductor, a silicon semiconductor, etc., by bringing the t-butylhydrazine into contact with a synthetic zeolite-based absorbent having a fine pore diameter in the vapor phase. SOLUTION: t-Butylhydrazine in a state under a vapor pressure thereof alone or diluted with an inert gas is brought into contact with a synthetic zeolite-based absorbent having a pore diameter corresponding to 3-4Å(which is a hydrous synthetic crystal sodium aluminosilicate such as molecular sieves 3A and 4A, prepared by activation while passing an inert gas at about 200-350 deg.C, filling the activated aliuminosilicate in a purifying cylinder at 50-1,500mm filling length and affording a fixed bed) in the vapor phase [preferably at about 1-50cm/sec superficial standard linear velocity (LV) and about 50-100 deg.C under about 0.01-3kg/cm<2> abs pressure] and thereby highly purified. The vapor of the purified objective compound or a mixed thereof is passed through a cooler, condensed and collected as a liquid.
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