发明名称 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
摘要 |
A method of obtaining high quality passivation layers on silicon carbide surfaces by oxidizing a sacrificial layer of a silicon-containing material on a silicon carbide portion of a device structure to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants that would otherwise degrade the electrical integrity of the oxide layer.
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申请公布号 |
US5776837(A) |
申请公布日期 |
1998.07.07 |
申请号 |
US19960752716 |
申请日期 |
1996.11.19 |
申请人 |
CREE RESEARCH, INC. |
发明人 |
PALMOUR, JOHN W. |
分类号 |
H01L21/04;H01L23/31;H01L29/24;H01L29/51;H01L29/78;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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