Amid- oder Imid- enthaltendes Copolymer, Herstellungsverfahren für das Copolymer und dieses Copolymer enthaltendes Photoresist

摘要

A novel copolymer useful for photoresist, which allows a formation of patterns showing a significantly improved resolution in a photolithography using ArF (193 nm) light source, is prepared by copolymerizing at least two cycloaliphatic olefins with an amide or imide (e.g. acrylamide or maleimide derivatives). The cycloaliphatic olefins include norbornene or cyclohexene derivatives.