| 摘要 |
<p>The breakdown voltage at high current values can be reduced in an HV-MOST with a weakly doped drain extension and a conventional interdigitated source/drain configuration, so that the SOAR (safe operating area) is reduced. The invention is based inter alia on the recognition that breakdown occurs at the end faces of the drain fingers at high current values owing to current convergences and the accompanying Kirk effect. To widen the SOAR of the transistor, the tips (8) of the drain fingers (5, 6) are rendered inactive in that the source fingers (4) are locally interrupted. In an optimised embodiment, the source fingers (4) are shorter than the drain fingers (5, 6).</p> |
