| 摘要 |
<p>A process for manufacturing narrow gap semiconductors with a controllable excess carrier lifetime is disclosed. MQWs (34) are grown using molecular beam epitaxy at low temperatures using Be-doped In0.53Ga0.47As for the wells (36) and Be-doped In0.52Al0.48As for the barriers (38). The MQWs are then annealed. The annealed, Be-doped MQWs are found to retain the carrier lifetime reduction induced by low-temperature growth in this narrow-gap material system.</p> |
