发明名称 Solar cell with p=n barrier type semiconductor layer
摘要 A method of producing a solar cell, which has a semiconductor layer (2) which contains a p-n barrier layer and which is provided with metallic strip contacts (4) on its light irradiated upper face and with one or more metallic surface contacts (6) on its back face, involves: (a) sandwiching the semiconductor layer (2) between a non-conductive bottom foil (10), having a conductor line (14) for contacting the surface contact (6), and a top foil (8), having a conductor line (12) for contacting the strip contacts (4); and (b) joining the foils together around the semiconductor layer for electrically connecting the semiconductor layer to the conductor lines. Preferably, the foils (8, 10) are made of thermoplastic material. Also claimed is a method of producing a solar module consisting of several solar cells produced as described above. Further claimed are a solar cell and a solar module having a structure as described above.
申请公布号 DE19652810(A1) 申请公布日期 1998.07.02
申请号 DE1996152810 申请日期 1996.12.18
申请人 PRIESEMUTH, WOLFGANG, DIPL.-ING., 83512 WASSERBURG, DE 发明人 PRIESEMUTH, WOLFGANG, DIPL.-ING., 83512 WASSERBURG, DE
分类号 H01L31/02;H01L31/048;H01L31/05 主分类号 H01L31/02
代理机构 代理人
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