发明名称 Mit Harz eingekapseltes Halbleiterbauelement
摘要 A resin-sealed semiconductor device that exhibits high reliability in heat-cycle and impact resistance testing. The device comprises a resin-sealed semiconductor device (1) in which a cured resin dam (3) with a JIS A hardness of 40 to 95 is formed in the zone of the bonding wires that electrically connect the semiconductor element onto the surface of a circuit board (2) and the semiconductor element is mounted within the cured resin dam and is covered with a cured resin sealant (4) having a JIS A hardness of 1 to 39. <IMAGE>
申请公布号 DE69502641(D1) 申请公布日期 1998.07.02
申请号 DE1995602641 申请日期 1995.02.07
申请人 DOW CORNING TORAY SILICONE CO., LTD., TOKIO/TOKYO, JP 发明人 KASUYA, AKIRA, DOW CORNING TORAY SILICONE CO., LTD, ICHIHARA-SHI, CHIBA PREF., JP;MINE, KATSUTOSHI, DOW CORNING TORAY SILICONE, ICHIHARA-SHI, CHIBA PREF., JP;YAMAKAWA, KIMIO, DOW CORNING TORAY SILICONE, ICHIHARA-SHI, CHIBA PREF., JP
分类号 H01L23/28;H01L23/24 主分类号 H01L23/28
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