| 摘要 |
The invention relates to a method of manufacturing a semiconductor device, in which a pn-junction (2) is provided in a semiconductor wafer (1) of a first conduction type by providing doping atoms of a second conduction type, which is opposed to the first conduction type, via a first main face (3) of the main faces (3, 5) of the wafer (1), subdividing said wafer (1) into individual semiconductor bodies (10) having a pn-junction (2) between and substantially parallel to two opposing connections faces (3, 5), connectiong said connection faces (3, 5) to connection bodies (11, 12) by means of a connection layer (15) and covering the semiconductor bodies (10) with a glass (20). The invention also relates to a glass-covered semiconductor device. The invention also relates to a semiconductor device covered with glass (20). In accordance with the invention, the method is characterized in that after the pn-junction (2) has been provided on the first main face (3) of the semiconductor wafer (1), a monocrystalline silicon layer (7) having atoms of the second conduction type is epitaxially provided, whereafter the wafer (1) is subdivided into semiconductor bodies (10). By virtue thereof, the percentage of rejects during the manufacturing process is substantially reduced. |
