| 摘要 |
<p>In order to increase the storage capacity of a capacitor, the capacitor is constituted in a tall three-dimensional structure (composed of a lower electrode (12), a capacitor dielectric film (13), and an upper electrode (14)) and, in order to relieve the height difference between the memory cell area in which the capacitor is provided and its peripheral circuit area, an insulating film (15) is desposited on the areas and removed from the peripheral circuit area only and a metallic layer (M1) is only buried in the area from which the insulating film (15) is removed. After the metallic layer (M1) is buried, metallic wiring (17) is formed by patterning the metallic layer (17) by photolithography and dry etching.</p> |
