| 摘要 |
<p>An electrode (79, 329) for a ferroelectric electronic device (80, 317C) is formed on an SiO2 isolation layer (77, 324) by depositing an adhesion layer (98, 326), such as titanium, between about 25 Å and 500 Å thick, then a layer (81, 328) of a nobel metal, such as platinum, that is at least 10 times thicker than the adhesion layer. The electrode is then annealed at a temperature higher than the minimum oxide eutectic temperature of the adhesion layer. The electrode is moved into the annealing furnace at a ramp rate such that it reaches its anneal temperature in five minutes or less. The relative thinness of the adhesion layer and the quick ramp up of the anneal causes all the titanium to be tied up in the oxide before it can diffuse through the platinum, and prevents the formation of rutile phases of the titanium and defects such as voids and hillocks in the platinum, which can destabilize the electrode.</p> |
