| 摘要 |
<p>A description is given of a furnace (1) for Rapid Thermal Processing of a wafer (7), in which furnace the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15, 17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15, 17), which is in the heat-absorbing state. The switching device comprises a switching film of a trivalent metal, such as gadolinium, which is capable of forming hybrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hybrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.</p> |
