| 发明名称 |
Stress-adjusted insulating film forming method, semiconductor device and method of manufacturing the same |
| 摘要 |
<p>There is disclosed a method of forming stress-adjusted insulating films which are interposed between respective interconnection layers upon laminating metal interconnection layers in excess of three-layer can be obtained by depositing on a substrate (21) alternately insulating films (23a to 23d) having a tensile stress and insulating films (22a to 22e) having a compressing stress.</p> |
| 申请公布号 |
EP0851480(A2) |
申请公布日期 |
1998.07.01 |
| 申请号 |
EP19970112763 |
申请日期 |
1997.07.24 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
NISHIMOTO, YUHKO;MAEDA, KAZUO |
| 分类号 |
H01L23/522;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
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