发明名称 |
Metal programmed transistor array. |
摘要 |
A semi-conductor device has a substrate with an oxide layer thereover. Within the oxide layer are a plurality of rows of polycrystalline material which represent the rows in the transistor array. Over the top of the oxide material are a plurality of columns of metal areas which represent the columns of the transistor array. Below each intersection of a metal layer and a gate layer are contact areas in the substrate which align with the gate to form a transistor within the semi-conductor device. The source implant for all transistors are connected to ground. The drain implant of each transistor is connected to the metal layer above through a window in the oxide material only if a transistor is required at the specific row and column intersection for a specific pre-programed memory. By forming an array of transistors and controlling the use of a transistor at specific row and column intersections by controlling whether the column connects electrically with the drain implant of the transistor, the mask changes are performed at a later stage in the manufacturing process. Mask changes are performed for connection of transistors in the contact windows etching mask, leaving fewer steps for completion of the semi-conductor from customizing the design to unique customer requirements. |
申请公布号 |
EP0666599(A3) |
申请公布日期 |
1998.07.01 |
申请号 |
EP19950300691 |
申请日期 |
1995.02.03 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
ALLEE, DAREN L. |
分类号 |
H01L29/78;H01L21/82;H01L21/8246;H01L27/112 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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