| 摘要 |
Digit lines 31 to 34 and word lines 35 to 38 are provided. NMOS transistors 1 to 4 serving as Y selectors, a memory cell divided into two memory cell groups 25 and 26, a write circuit 21, a sense amplifier 22, a Y decoder 23, an X decoder 24, and a selector for selecting the memory cell groups 25 and 26 are provided in correspondence to the digit and word lines. The selector includes a PMOS transistor 27 and NMOS transistors 28 to 30. The memory cell group 25 is selected when a most significant address bit signal 101 is inputted as "0" level signal, and the memory cell group 26 is selected when the signal 101 is inputted as "1" level signal.
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