发明名称 METHOD FOR MANUFACTURING RESIN SEALED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To effectively mold even in a structure that resin thicknesses of upper and lower sides of a lead frame are not uniform, in order to form in mold simultaneously a hybrid integrated circuit substrate and power transistors and make compatible miniaturization and high reliability. SOLUTION: A hybrid integrated circuit substrate 7 and power transistors 6 are mounted on a lead flame FL, and they are electrically connected via wires 9, 15. The lead flame FL is nipped between an upper die and a lower die, and also inner leads 13a to 13d are projected from near an air bent in a cavity 3. Resin is injected from a gate 4, so that resin is passed on an upper side and a lower side of the lead flame FL and is passed on an upper face of the inner leads 13a to 13d. Thereafter, the cavity 3 is filled with resin passing on an upper side of the lead frame FL and resin passing on a lower side of the lead frame FL.
申请公布号 JPH10178030(A) 申请公布日期 1998.06.30
申请号 JP19960339815 申请日期 1996.12.19
申请人 DENSO CORP 发明人 NIIOBI AKIRA
分类号 B29C45/26;B29C45/02;B29C45/14;B29L31/34;H01L21/56;H01L23/29;H01L23/31 主分类号 B29C45/26
代理机构 代理人
主权项
地址