Resonant-tunnelling hot electron transistor

摘要

A resonant-tunnelling hot transistor includes buffer layers undoped with impurities on either side of a collector or an emitter potential barrier having a quantum well structure. When a voltage is applied to the transistor, most of the potential drop occurs at the first buffer layer and the second buffer layer due to their thickness. This enables the inclination of the energy band of the collector barrier layer or the emitter barrier layer to be diminished, whereby the energy of the confined energy state EQW of the quantum well and the energy change of the confined state is diminished. In addition, the NDR region of I-V characteristics curve can be moved by controlling the biasing voltage, and the wave form of the curve maintains its original form.