发明名称 METHOD OF FORMING PLANE PATTERN FOR LAYER OF SEMICONDUCTOR DEVICE, AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING THE
摘要 PROBLEM TO BE SOLVED: To make uniform the density of pattern by a method wherein an inverted pattern is formed on the first pattern of the first layer, and a target pattern is formed only in the region where the inverted pattern and the second pattern region of the second enlarged layer are overlapped. SOLUTION: A second wiring pattern 11 of a second wiring layer is oversize treated, the wiring pattern 11 is made larger in the prescribed dimensions in the two dimensional direction, and a pattern 21 is formed. Also, a first wiring pattern 12 of a first wiring layer is formed, and after the first wiring pattern 12 has been oversize treated, an inverted pattern 22 is obtained. The pattern 21, which is obtained by oversize treating the second wiring layer, and the wiring pattern 12 of the first wiring layer are superposed, the patterns 12 and 21 are treated in such a manner that the overlapped region only is left, and a target pattern is formed. As a result, pattern density can be made uniform, and the defects such as the disconnection of wire and the short circuit caused by the steps can be prevented.
申请公布号 JPH10178012(A) 申请公布日期 1998.06.30
申请号 JP19960340231 申请日期 1996.12.19
申请人 FUJI FILM MICRO DEVICE KK;FUJI PHOTO FILM CO LTD 发明人 SUZUKI NORIAKI;WATANABE SATOSHI
分类号 H01L23/52;H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L23/52
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