High dielectric capacitors

摘要

Capacitors and methods of fabricating high dielectric capacitors which do not create a step difference where the high dielectric material is formed are provided. These methods include forming a first electrode layer on an integrated circuit device substrate and a layer of high dielectric material on the first electrode layer opposite the integrated circuit device substrate. A second electrode layer is formed on the layer of high dielectric material opposite the first electrode layer. The first electrode layer, the high dielectric layer and the second electrode layer are patterned to form a capacitor cell unit having a sidewall which extends from the first electrode beyond the layer of high dielectric material and to the second electrode layer. An insulating spacer is formed on the sidewall of the capacitor cell unit extending from the first electrode layer to the second electrode layer.