| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor inertia sensor, which is suited to mass- production because of low cost through the elimination of bonding of wafers and laser processing and is low in parasitic capacity, highly sensitive and accurate for forming gap between electrodes. SOLUTION: A semiconductor inertia sensor 30 is provided with a movable electrode 26 on the upper side of a glass substrate 10, and a pair of fixed electrodes 27 and 28 are provided with the movable electrode 26 in between. The movable electrode 26 and electrodes 27 and 28 are formed by laminating successive films 21a, 21b and 21c, single-crystal silicon layers 20a, 20b and 20c and polysilicon layers 22a, 22b and 22c which can be etched respectively without eroding the silicon. The glass substrate 10 is bonded with the films 21b and 21c of the fixed electrodes 27 and 28 through a spacer layer 23 made of polysilicon. |
