| 摘要 |
PROBLEM TO BE SOLVED: To enable heat induced in a wafer in an ion implantation process to be dissipated so as to protect a resist layer, and to prevent the wafer from adhering to a silicone rubber layer after implantation is executed by a method wherein the silicone rubber layer provided to a metal base which serves as a platen is prescribed in thermal conductivity, and a crimp pattern is formed on the surface of the silicon rubber later. SOLUTION: A heat conductive silicone rubber layer 2 is formed on the surface of a metal platen base 3, and a semiconductor wafer 5 is held on the silicone rubber layer 2. Furthermore, a heat exchanger 4 of coolant circulating type is provided to the underside of the platen base 3, and heat induced by ion implantation in the semiconductor wafer 5 is dissipated by the heat exchanger 4. Furthermore, a crimp pattern is formed on the surface of the heat conductive silicone rubber layer 2. Moreover, the heat conductive silicon rubber layer 2 is set, at a thermal conductivity of 1.0×10<-> cal/cm.sec. deg.C or above. Therefore, filler is mixed into silicone rubber composition so as to enhance it in thermal conductivity. Ceramic powder of high thermal conductivity such as alumina powder is suitable for the filler.
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