| 发明名称 |
Method of making a fully-dielectric-isolated fet |
| 摘要 |
A field-effect transistor structure wherein a single patterned thin film semiconductor layer: is monocrystalline, and epitaxially matched to and dielectrically isolated from an underlying body region, in channel locations; and is polycrystalline in source/drain locations which abut said channel locations.
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| 申请公布号 |
US5773328(A) |
申请公布日期 |
1998.06.30 |
| 申请号 |
US19950474710 |
申请日期 |
1995.06.07 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
BLANCHARD, RICHARD A. |
| 分类号 |
H01L29/78;H01L21/00;H01L21/265;H01L21/336;H01L21/76;H01L21/8238;H01L21/84;H01L27/092;H01L29/06;H01L29/10;H01L29/76;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/78 |
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