发明名称 SEMICONDUCTOR DEVICE FOR HIGH FREQUENCY
摘要 PROBLEM TO BE SOLVED: To suppress the transmission loss of a high frequency signal by electromagnetically combining a first microstrip line electrically connected with a high-frequency semiconductor element and a second microstrip line formed on the bottom face of a dielectric substrate within the dielectric substrate. SOLUTION: In the dielectric substrate, the first microstrip line is formed of a strip guiding body formed on the surface of the dielectric substrate in a cavity and a second microstrip line is formed between the strip conductive line on the bottom surface of a semiconductor and a ground layer. In this case, the strip conductive line and a slot hole are arranged to satisfy expressions I and at the time of setting lengths from just over the centers of the slot holes of the first and second microstrip lines to the tip part of each line to be ML, the long diameters of the slot holes SL, a wave length λ1 at the microstrip lines and wave length λ2 at the slot holes.
申请公布号 JPH10178306(A) 申请公布日期 1998.06.30
申请号 JP19960338691 申请日期 1996.12.18
申请人 KYOCERA CORP 发明人 KITAZAWA KENJI;KORIYAMA SHINICHI;FUJII MIKIO
分类号 H01L23/12;H01P3/08;H01P5/02;H01P5/08 主分类号 H01L23/12
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