| 摘要 |
A semiconductor device having a differential amplifier circuit portion made of two multi-emitter bipolar transistors (BPT). Each multi-emitter BPT has the same number of a plurality of transistor elements each having an independent emitter electrode. Each transistor element of one multi-emitter BPT and a corresponding transistor element of the other multi-emitter BPT form a transistor element pair, with the emitter electrodes thereof being electrically connected. Each transistor element pair is electrically independent from other transistor element pairs, and the emitter electrodes of each transistor element pair are connected to an emitter current source independently from other emitter current sources.
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