发明名称 |
Method for making single and double gate field effect transistors with sidewall source-drain contacts |
摘要 |
The present invention concerns single-gate and double-gate field effect transistors having a sidewall source contact and a sidewall drain contact, and methods for making such field effect transistors. The channel of the present field effect transistors is raised with respect to the support structure underneath and the source and drain regions form an integral part of the channel.
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申请公布号 |
US5773331(A) |
申请公布日期 |
1998.06.30 |
申请号 |
US19960767916 |
申请日期 |
1996.12.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SOLOMON, PAUL MICHAEL;WONG, HON-SUM PHILIP |
分类号 |
H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L21/86 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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