发明名称 SEMICONDUCTOR MEMORY DEVICE AND LAYOUT OF INTERNAL STRUCTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To make it possible to constitute global I/O lines even in the case where subword driver regions are made smaller by a method wherein switching means are arranged separately from each other at conjunction regions where local I/O lines intersect the global I/O lines. SOLUTION: Conjunctions 15a, 15c and 15e, which are respectively laid out with a driver, and conjunctions 15b, 15d, 15f and 15g, which are respectively arranged with a switching means, are separated from each other, two groups of global I/O lines G101 pass through the conjunctions 15b and 15f and other two groups of global I/O lines G102 pass through the conjunctions 15d and 15g. As a result, even if subword driver regions are made small compared with conventional subword driver regions, the global I/O lines can be constituted and in addition to this, a difference between the skew of data, which is transmitted from bit lines close to the global I/O lines, and the skew of data, which is transmitted from bit lines far from the global I/O lines, can be reduced.
申请公布号 JPH10178158(A) 申请公布日期 1998.06.30
申请号 JP19970292754 申请日期 1997.10.24
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI KEISAN
分类号 G11C11/409;G11C7/00;G11C7/10;G11C8/14;G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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