| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to inhibit the generation of a hillock on a semiconductor element by a method wherein after a high-resistance layer is formed, a wiring part and an overcoat are made form in order and a sintering treatment, which is performed for improving the connection between the wiring part and the high-resistance layer, is performed after the overcoat is formed. SOLUTION: This manufacturing method makes it the key point that a second sintering treatment is not performed immediately after a first Al layer 9 is formed but the second sintering treatment is performed after an overcoat 10 is deposited. As the result, the prevention of infiltration of hydrogen into a third polysilicon layer 7 and moreover, an effect of eliminating the dissociation of hydrogen in the layer 7 can be obtained in addition to the improvement of the electrical connection characteristics, which is the object of an intrinsic sintering, of a semiconductor element and it becomes possible that the effect of a change in a potential in a bit line is inhibited to stabilize the high resistance of the element. Moreover, it becomes possible to inhibit the generation of an Al hillock on the element. |
