GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light emitting device in which a gallium nitride compound semiconductor layer doped with p-type impurities is turned to a low-resistivity p-type. SOLUTION: A gallium nitride compound semiconductor light emitting device is formed by growing an n-type gallium nitride compound semiconductor layer and a gallium nitride compound semiconductor layer containing p-type impurities on a substrate by vapor deposition. The grown n-type gallium nitride compound semiconductor layer and the p-type gallium nitride compound semiconductor layer are annealed as a whole and the gallium nitride compound semiconductor layer containing p-type impurities turned to a p-type gallium nitride compound semiconductor layer. If the annealing time is set to 10min., the resistivity of the GaN layer doped with Mg as p-type impurity starts decreasing suddenly at a temperature exceeding 400 deg.C and a constantly low resistivity as p-type characteristics is exhibited at 700 deg.C and higher, which is an effect of the annealing.