| 摘要 |
PROBLEM TO BE SOLVED: To enable the simultaneous solution of problems, which are generated in a cell array region and a peripheral circuit region during the process of a metal wiring, by a method wherein a material layer for the lower electrode of a ferroelectric capacitor is applied as a local interconnection wiring which discharges the role of the metal wiring. SOLUTION: As a local interconnection wiring, that is, a first metal wiring 109b is obtained by patterning a first metal layer, which consists of a platinum element, for a lower electrode of a ferroelectric capacitor, the contact resistance between the metal wiring 109b and the first metal layer is not increased even if a Ti layer, which is an ohmic layer, is not used unlike a conventional metal wiring method using an aluminium wiring. Moreover, second interlayer insulating layers 115 are formed on the upper parts of resultant materials in a cell array region and a peripheral circuit region. At this time, for coupling second metal wirings 119 with each other, via holes are formed in the upper part of the capacitor in the cell array region and via holes are formed in the upper part of the wiring 109b in the peripheral circuit region. |
