| 摘要 |
PROBLEM TO BE SOLVED: To improve contact resistance in a semiconductor device. SOLUTION: A large-diameter contact hole 3 and a small-diameter contract hole 4 are formed in a silicon oxide film 2 formed on a silicon substrate 1. High melting-point metal 5 which thickness of 300nm is deposited on the entire surface of the silicon substrate 1, so as to completely fill the small-diameter contact hole 4 and the large-diameter contact hole 3 with a part of the hole 3 left unfilled. Then, the high melting-point metal 5 is etched back such that the small-diameter contact hole 4 remains completely filled, and a high melting- point metal side wall 6 is formed from a portion on the side wall of the large- diameter contact hole 3 lower by a necessary distance from the top rim of the hole 3. Thereafter, the substrate 1 is coated with aluminum or the like to form a wiring layer 8. |
