| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser which prevents the resistance of an Fe-InP constriction layer from being lowered by a method wherein a p-type InP layer is provided on a buried layer in which an active InP layer is laminated and in which an iron-doped InP layer and an n-type layer are laminated on both sides sequentially and the produce of an n-type impurity concentration in the n-type InP layer multiplied by a layer thickness satisfies a formula. SOLUTION: S P-type InP layer 4B is provided on a buried layer in which an active layer 2 is laminated and in which an iron-doped InP layer 5 and an n-type InP layer 6 are laminated sequentially on other sides of the active layer 3. The product of an n-type impurity concentration (n-type concentration) in the n-type InP layer (Si-InP layer) 6 multiplied by a layer thickness (an n-layer thickness) satisfies a formula of 5.0×10<19> (cm<-3> nm)<(n-type concentration)×(n-layer thickness)<3.0×10<21> (cm<-3>×nm). Thereby, it is possible to prevent the resistance of an Fe-InP construction layer doe to the diffusion Zn, and the strain of an optical intensity distribution due to the existence of an n-type InP current stop layer can be suppressed to a negligible degree. In addition, the formulas is established with reference to all n-type dopants without being limited to Si.
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