| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-luminance LED or LD by a method wherein, in a semiconductor light-emitting element, a light-emitting part and a layer for a substrate whose composition is expressed by a formula are laminated on a seed substrate in this order. SOLUTION: As a seed substrate, a substrate which is composed of various materials such as sapphire, SiC, MnO and the like can be used. A light-emitting part and a layer for the substrate are constituted of at least one kind out of various semiconductor compounds expressed by a formula of InXGaYAlZN (wherein 0<=X<=1, 0<=Y<=1, 0<=Z<=1, and X+Y+Z=1). As the shape of the light-emitting part, a homojunction structure, a heterostructure such as a single heterostructure, a double heterostructure or the like, a multiple quantum well structure, a single quantum well structure and the like are enumerated, but the double heterostructure is particularly preferable. The light- emitting part is composed of a multilayer of two or more layers. A first layer of it may be laminated directly on the seed substrate, a buffer layer which relaxes a lattice mismatch is first formed on the seed substrate as required, and the first layer may be laminated on it. The thickness of the layer for the substrate is set at about 10 to 1000μm, but it is set particularly preferably at about 50 to 300μm. |
