发明名称 |
Structure and method to prevent over erasure of nonvolatile memory transistors |
摘要 |
A method and structure for preventing over erasure in non-volatile memory cells uses simultaneous erase and program current injections which offset one another. These currents come from two separate injection points within the non-volatile memory transistor and are dominant at different points during the erase operation. The first occurring current erases the non-volatile device and the second prevents over erasure.
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申请公布号 |
US5774400(A) |
申请公布日期 |
1998.06.30 |
申请号 |
US19960772970 |
申请日期 |
1996.12.23 |
申请人 |
NVX CORPORATION |
发明人 |
LANCASTER, LOREN T.;HIROSE, RYAN T. |
分类号 |
G11C16/14;G11C16/34;(IPC1-7):G11C11/40 |
主分类号 |
G11C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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