| 摘要 |
PCT No. PCT/JP95/01337 Sec. 371 Date Jun. 12, 1996 Sec. 102(e) Date Jun. 12, 1996 PCT Filed Jul. 4, 1995 PCT Pub. No. WO96/01549 PCT Pub. Date Jan. 18, 1996One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting of S, Se, Te and O are evaporated respectively by means of a vacuum vapor deposition method or molecular beam epitaxial method to produce a ternary compound semiconductor material having a low vapor pressure, and the thus produced ternary compound semiconductor material is deposited on a substrate to form a ternary compound semiconductor thin film. Particularly, when a phosphor thin film for electroluminescence emitting blue light is to be grown, an element Sr and a binary compound Ga2S3 are respectively evaporated by the vacuum evaporation method or molecular beam epitaxial method to deposit a ternary compound semiconductor material SrGa2S4 on a substrate, and at the same time impurity element Ce forming luminescent center is evaporated such that the ternary compound semiconductor material SrGa2S4 is doped with the impurity element.
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