| 摘要 |
PROBLEM TO BE SOLVED: To make a gallium nitride compound semiconductor doped with p-type impurities to a low-resistivity p-type. SOLUTION: A gallium nitride compound semiconductor layer containing p-type impurities and hydrogen is grown on a substrate by vapor deposition. Then the layer is annealed to remove hydrogen and turned to a p-type gallium nitride compound semiconductor layer. If the annealing time is set to 10min., the resistivity of the GaN layer doped with Mg as p-type impurity starts decreasing suddenly at a temperature exceeding 400 deg.C, and a constantly low resistivity as p-type characteristics is exhibited at 700 deg.C and higher, which is an effect of the annealing. |
