| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition device which can form a thin film having film quality of high grade by limiting incident angles of particles depositing on a substrate. SOLUTION: In the vapor deposition device for forming the thin film on the substrate 5 transported under vacuum by vapor-depositing a feed material for vapor deposition (MgO, for example), an incident angle regulating means regulating the incident angles of the particles so that incident anglesθ2 ,θ3 of the particles 10 of the feed material for vapor deposition sticking to the substrate 5 do not exceed a prescribed angle is provided. As the incident angle regulating means, vapor depositing material shielding plates 11a, 11b for shielding the particles 10 of the feed material for vapor deposition having the incident angleθ3 larger than 35 deg. toward the substrate 5 are provided at an upstream side and a downstream side of a transportation direction of the substrate 5. Further, plural evaporation sources 8a to 8d are arranged in a direction perpendicular to the transportation direction of the substrate 5 and vapor depositing material shielding plates 9a, 9b, 9c of a screen shape are provided between respective evaporation sources 8a to 8d to shield the particles 10 of the feed material for vapor deposition having the incident angleθ2 larger than 35 deg. toward the substrate 5.
|
